PART |
Description |
Maker |
EIA1213-2P EIB1213-2P |
12.75-13.25GHz, 2W internally matched power FET
|
Excelics Semiconductor
|
EIB1213-2P |
12.75-13.25GHz 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIB1213-4P |
12.75-13.25GHz 4W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIM1213-4 |
12.75 - 13.25GHz Multi-Stage Power Amplifier
|
Excelics Semiconductor, Inc.
|
Q4004LT Q6015LT Q6015LTH Q2010LT Q4015LT Q4015LTH |
Internally Triggered Triacs (4 A to 15 A) Power Driver IC; Driver Type:Sink; Source Output Current Max:600mA; Package/Case:22-DIP; Leaded Process Compatible:Yes; No. of Drivers:8; Output Current Max:600mA; Output Voltage Max:50V; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes Internally Triggered Triacs (4 A to 15 A) 内部触发双向 A5甲) Internally Triggered Triacs (4 A to 15 A) 内部触发双向 A15甲)
|
TECCOR[Teccor Electronics] Littelfuse, Inc. TE Connectivity, Ltd.
|
AGB3311 AGB3311S24Q1 AGB3311_REV_1.0 |
50 High Linearity Low Noise Internally Biased Wideband Gain Block 50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block 50蟹 High Linearity Low Noise Internally Biased Wideband Gain Block 50з High Linearity Low Noise Internally Biased Wideband Gain Block From old datasheet system
|
ANADIGICS[ANADIGICS, Inc]
|
MGFK39V4045 K394045 |
14.0~14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET From old datasheet system 14.0-14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC39V5258 C395258 |
5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET From old datasheet system 5.2~5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC42V4450A C424450A |
From old datasheet system 4.4~5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET 4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MLD2N06CL ON2069 MLD2N06CL-D |
VOLTAGE CLAMPED CURRENT LIMITING MOSFET From old datasheet system Internally Clamped, Current Limited N hannel Logic Level Power MOSFET SMARTDISCRETES Internally Clamped, Current Limited N-Channel Logic Level Power MOSFET
|
Motorola, Inc. ON Semiconductor
|
MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|